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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2151
DESCRIPTION With TO-220Fa package Low collector to emitter saturation voltage Large collector current IC APPLICATIONS For power switching applicaitons
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER
TOR NDU ICO E SEM ANG INCH
CONDITIONS VALUE 130 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector current-peak TC=25ae Open collector 10 20 30 Collector power dissipation Ta=25ae 2 150 -55~150
UNIT V V V A A
PC
W
Tj Tstg
Junction temperature Storage temperature
ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=10mA, IB=0 IC=6A; IB=0.3A IC=10A; IB=1A IC=6A; IB=0.3A IC=10A; IB=1A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=3A ; VCE=2V IC=6A ; VCE=2V 45 MIN 80
2SD2151
SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 ICBO IEBO hFE-1 hFE-2 hFE-3 fT
TYP.
MAX
UNIT V
0.5 1.5 1.5 2.5 10 50 |I |I
V V V V A A
Switching times ton ts tf
TOR NDU ICO E SEM ANG INCH
90 30 Transition frequency IC=0.5A ; VCE=10V;f=1MHz 20 Turn-on time Storage time Fall time IC=6A ;IB1=-IB2=0.6A VCC=50V 0.5 2.0 0.2
260
MHz
|I |I |I
s s s
hFE-2 Classifications Q 90-180 P 130-260
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2151
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm)
3


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